pzta 92, pzta 93 oct-22-1999 1 pnp silicon high-voltage transistors ? high breakdown voltage ? low collector-emitter saturation voltage ? complementary types: pzta 92, pzta 93 (npn) vps05163 1 2 3 4 type marking pin configuration package pzta 92 pzta 93 pzta 92 pzta 93 1 = b 1 = b 2 = c 2 = c 3 = e 3 = e 4 = c 4 = c sot-223 sot-223 maximum ratings parameter pzta 92 symbol unit pzta 93 collector-emitter voltage v ceo 300 v 200 300 200 collector-base voltage v cbo 5 emitter-base voltage v ebo 5 dc collector current i c 500 ma i b 100 base current w p tot total power dissipation , t s = 124 c 1.5 junction temperature 150 c t j t stg -65 ... 150 storage temperature thermal resistance r thja 72 junction ambient 1) k/w junction - soldering point r thjs 17 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
pzta 92, pzta 93 oct-22-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit typ. max. min. dc characteristics v - - collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo pzta 92 pzta 93 - - 300 200 - - collector-base breakdown voltage i c = 100 a, i b = 0 300 200 v (br)cbo pzta 92 pzta 93 - - - - v (br)ebo emitter-base breakdown voltage i e = 100 a, i c = 0 5 - - - - collector cutoff current v cb = 200 v, i e = 0 v cb = 160 v, i e = 0 pzta 92 pzta 93 250 250 na i cbo - - - - collector cutoff current v cb = 200 v, i e = 0 , t a = 150 c v cb = 160 v, i e = 0 , t a = 150 c pzta 92 pzta 93 20 20 a i cbo - - na emitter cutoff current v eb = 3 v, i c = 0 100 i ebo 25 40 25 - - - - dc current gain 1) i c = 1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 30 ma, v ce = 10 v h fe - - - - - - - 0.5 0.4 v cesat v pzta 92 pzta 93 collector-emitter saturation voltage1) i c = 20 ma, i b = 2 ma - base-emitter saturation voltage 1) i c = 20 ma, i b = 2 ma - 0.9 v besat 1) pulse test: t < 300 s; d < 2%
pzta 92, pzta 93 oct-22-1999 3 electrical characteristics at t a = 25c, unless otherwise specified. unit parameter values symbol min. max. typ. ac characteristics 100 - - mhz f t transition frequency i c = 20 ma, v ce = 10 v, f = 100 mhz - - pzta 92 pzta 93 c cb collector-base capacitance v cb = 20 v, f = 1 mhz 6 8 pf - - total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0.0 ehp00733 pzta 92/93 150 w 50 100 ?c 0.2 0.4 0.6 0.8 1.0 1.2 1.6 t a s t p tot t t ; as transition frequency f t = f ( i c ) v ce = 10v, f = 100mhz ehp00734 pzta 92/93 10 10 10 ma f c 10 mhz 10 t 555 0123 10 3 2 10 1 5
pzta 92, pzta 93 oct-22-1999 4 permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00346 pzta 92/93 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t dc current gain h fe = f ( i c ) v ce = 10v ehp00735 pzta 92/93 10 10 ma h c 10 5 fe 10 3 1 10 0 5 10 10 10 -1 0 1 2 3 5 10 2 555 2 collector cutoff current i cbo = f ( t a ) v cb = 160v 0 10 ehp00736 pzta 92/93 a t 150 -1 4 10 cb0 na 50 100 0 10 1 10 3 10 ? c 10 2 max typ collector current i c = f ( v be ) v ce = 10v ehp00737 pzta 92/93 10 0 v be 1.5 ma c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v 5 10 2
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